NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology

The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide-semiconductor technology were studied. Under optimal programming conditions, high postprogram resistance can be achieved. These well-programmed fuses showed good data retention under unbiased temperature stress test. In order to avoid read disturb of unprogrammed fuses, the read current has to be kept below the threshold for silicide electromigration.