High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N+ substrate using a JTE as edge termination. A breakdown voltage higher than 3.5 kV has been measured on 0.16 and 2.56 mm2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 220 nC for a 4A current switched at 300°C.