Integration of 0/1-Level Packaged RF-MEMS Devices on MCM-D at Millimeter-Wave Frequencies

This paper reports on the development and optimization of 0/1-level packaged coplanar waveguide (CPW) lines and radio-frequency microelectromechanical systems (RF-MEMS) switches up to millimeter-wave frequencies. The 0-level package consists of an on-chip cavity obtained by flip-chip mounting a capping chip over the RF-MEMS device using BenzoCyclobutene (BCB) as the bonding and sealing material. The 0-level coplanar RF feedthroughs are implemented using BCB as the dielectric; gold stud-bumps and thermocompression are used for realizing the 1-level package. The 0-level packaged switches have been flip-chip mounted on a multilayer thin-film interconnect substrate using a high-resistivity Si carrier with embedded passives and substrate cavities. The insertion loss of a single 0/1-level transition is below -0.15 dB at 50 GHz. The measured return loss of a 0/1-level packaged 50-Omega CPW line remains better than -19 dB up to 71 GHz and better than -15 dB up to 90 GHz. It is shown that the leak rate of BCB sealed cavities depends on the BCB width, and leak rates as low as 10
^-11
mbar.l/s are measured for large BCB widths (> 800 mum), dropping to 10
^-8
mbar.l/s for BCB widths of around 100 mum. Depending on the bonding conditions, shear strengths as high as 150 MPa are achieved.