Flux Pinning Properties of Multilayered ${\rm MgB}_{2}/{\rm Ni}$ Thin Films

In this paper, we will show the superconducting properties of the alternately-layered MgB
₂
/Ni thin films. MgB
₂
/Ni multilayered thin films were prepared on silicon substrates (100) by sequentially switching an electron beam evaporation technique and a coaxial vacuum arc evaporation source. The lattice spacing of artificial pinning layers was designed to correspond to a magnetic field of 8 T (flux line lattice spacing of 15 nm). As a result, clear enhancement of Jc was observed in the multilayered thin film when the fields applied parallel to the film surface. The results suggest a great possibility of the artificial nanostructure to improve superconducting performances of MgB
₂
.