Low-Temperature Annealing Effect of RF Inductor With ${\hbox{FeNi-SiO}}_{2}$ Granular Film

A low-temperature annealing process in vacuum is proposed to enhance the inductance of RF inductors with FeNi-SiO
₂
magnetic granular films. Due to the great improvement of soft magnetic property in the 200degC and 350degC annealed film, the inductance is enhanced by 9.6% (200degC) and 8.3% (350degC), respectively, compared with the case of as-deposited film inductor. The peak value of quality factor, which is 9.18 for the as-deposited film inductor, is also increased to 9.27 (200degC ) and 12.27 (350degC), respectively.