Design and Simulation of 50 nm Vertical Double-Gate MOSFET (VDGM)

The paper demonstrate the design and simulation study of 2D Vertical Double-Gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50nm, body doping of 3.5 × 10
¹⁸
cm
^-3
and oxide thickness, T
_OX
= 2.5nm, a good drive current I
_ON
of 7 μA/μm and a low off-state leakage current I
_OFF
of 2 pA/μm was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubV
_T
= 89 mV/decade and threshold voltage V
_T
= 0.56V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM.