Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications

The fabrication of the MIM capacitors is illustrated in the paper. The effective capacitor areas are designed at 60 × 60, 240 × 240 and 380 × 380 μm
²
. From the s-parameter measurements, the fabricated capacitors showed capacitive capability up to frequency of 40GHz. Strong parasitic effect was observed at low frequency while attenuation effect was observed at high frequency.