Analysis of M-R elements for 10/sup 8/ bit/cm/sup 2/ arrays

Magnetoresistive memory elements made from 100-AA thick, 65% Ni, 15% Fe, 20% Co layers separated by a 40-AA nonmagnetic layer have been analyzed theoretically. The analysis shows that with lithography capable of a minimum feature size of 0.4 mu m and with the ability to deposit nonconducting magnetic keepers, memory arrays with a density of 10/sup 8/ bit/cm/sup 2/ can be achieved. Analysis shows that such elements can lead to random access memories with an access time of 5 mu s. In the case of plated conducting keepers, the element density is slightly diminished.<
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