Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

Issues associated with the integration of p-type band-edge (5.0~5.2 eV) effective work function (EWF) electrodes are identified and discussed. The Fermi-level (E
_f
) pinning effect traditionally used to explain the lowering of p-MOS EWF is believed not to be an intrinsic limitation. However, a new described as the "flatband (V
_fb
,) rolloff effect" is shown to be the dominant factor.