Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration

We demonstrate for the first time the CMOS integration combining inserted metal with FUSI using a novel process flow. The proposed flow allows for a flexible gate electrode and dielectric choice for island PMOSFETS, without adding excessive process complexity or additional masks. It is considered as a promising alternative for dual metal integration for 45 nm bulk CMOS technology and beyond.