An Investigation of Self-Heating Degradation of Metal Induced Laterally Crystallized N-Type Polysilicon Thin Film Transistors

Self-heating degradation of n-type MILC polysilicon TFTs is systematically investigated under different stress powers. Two-stage degradation behaviors with turnaround effect at initial stage are characterized. An anomalous continuous field-effect mobility increase along with its V
_g
dependence shift is first observed. A consistent model is proposed to understand observed degradation characteristics