High-Performance Chemical-Bath-Deposited Zinc Oxide Thin-Film Transistors

Solution-processed transparent zinc oxide (ZnO) transistors are demonstrated using a chemical bath deposition process for ZnO deposition. The process is glass compatible and amenable to producing fully transparent electronics. Mobility as high as 3.5 cm
²
/V ldr s with on-off ratios of ~10
⁵
is realized. The transparency of ZnO allows for complete coverage of the pixel by the pixel drive transistors; analysis shows that the performance achieved herein is sufficient even to drive high-brightness organic light-emitting diode (OLED) displays by exploiting the high mobility and optical transparency of these devices. This makes this technology extremely attractive for use in active-matrix OLED display applications.