Failure Mechanism Study of GaAs MODFET Devices and Integrated Circuits

GaAs Modulation Doped Field Effect Transistor (MOD-FET) integrated circuits have been accelerated stress tested under bias at 150°C, 200°C, 210°C. The failure mode has been identified to be a diffusion controlled degradation of the 2 DEC layers. Alpha particle irradiation resulted in a decrease in charge collection efficiency, and catastrophic gate burnout.