Acceleration Factors for Thin Gate Oxide Stressing

Time dependent dielectric breakdown (TDDB) data for 100Å of thermally grown SiO2 has been analyzed using an Eyring model based on thermodynamic free energy considerations. The model describes well the following features of the data: (1) an apparent activation energy which is a function of the stressing electric field and (2) a field acceleration parameter that is a function of temperature. Quantitatively, the model suggests the proper field dependence for the activation energy and the observed temperature dependence of the field acceleration in the 100Å oxide material. The apparent activation energy is found to decrease from > leV at low field stressing (Eb(50%) - Es > 5 MV/cm) to <0.3eV at higher fields Eb(50%)- Es < 3 MV/cm). Also, the field acceleration was found to be approximately 6 decades/MV/cm at room temperature but reduces to 2 decades/MV/cm at 150C.