A New Latent Failure Mechanism for Schottky Barrier Diodes with Al-Cu-Si Metallurgy

The defect responsible for anomalous leakage current in Al-Cu-Si metallized Schottky barrier diodes has been found. The defect is designated the "CuAl2/Si defect." A new latent failure mechanism associated with CuAl2/Si defects and inherent Schottky instability is modelled. Its ramification for Schottky reliability has been established. The nature of the defect, its formation, and leakage mechanism are given.