Effect of Structures of NiFe-Based Free Layers on Writing Properties in Toggle MRAMs

The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robustness, a fully promoted NiFe(111)/Ru(001) orientation was important