Freestanding Alumina Membrane by Double-Layer Anodization

A novel method has been developed for fabricating full or partial freestanding anodic alumina. In our method a sacrificial metal layer is introduced between an Al film and a Si
₃
N
₄
substrate. A freestanding alumina film at wafer scale is successfully achieved by anodizing the double metal layer, during which the alumina is spontaneously stripped off the Si
₃
N
₄
substrate due to the anodic oxidation of the sacrificial layer. The barrier oxide of the alumina film is effectively removed either by H
₃
PO
₄
dissolution or by CF
₄
reactive ion etching. The freestanding alumina film is utilized as a contact mask to transfer its nanoporous pattern to a Si substrate. By patterning the sacrificial metal layer with contact lithography, a partial freestanding alumina film is successfully achieved on the silicon chip, producing a unique micro/nanofluidic channel. Compared with previous techniques, the method reported here is advantageous for its simplicity and flexibility