Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N
₂
plasma. Fabricated resonator have thickness of 2~20 mum, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-mum-thick cantilever exhibits a high quality factor of 5700.