Intermodulation Behaviour of a Transient Trapping Model

Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias