Electrical Characterization of Leaky Charge-Trapping High- $\kappa$ MOS Devices Using Pulsed $Q$– $V$

A pulsed Q-V method enabling charge or capacitance measurements versus gate voltage of aggressively scaled, leaky (up to ~10 A/cm
²
), and charge-trapping high-kappa MOS devices is introduced. The method does not require RF structures and can be used on MOS capacitors or MOSFETs with an oxide capacitance of 1-10 pF. The method enables the measurement of charge trapping characteristics in leaky MOS devices and allows the accurate measurement of the inversion charge without influence of trapping for the determination of mobility in leaky charge-trapping MOS devices