Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor

We fabricated [100] and [110] directed nano wire MOSFET (NWFET), which works as NFET and PFET in the same channel. By comparing [100] and [110] direction, significantly small threshold voltage (V
_th
) fluctuation is experimentally observed in [110] PFET for the first time. This result supports the superiority of [110] NW PFET. Extremely narrow NWFET works as single-electron/single-hole transistors (SET/SHT). By comparing [100] and [110] direction, channel direction dependence of Coulomb blockade (CB) oscillations is experimentally clarified for the first time. We realize the highest performance in [100] SHT