Random Impurity Scattering Induced Variability in Conventional Nano-Scaled MOSFETs: Ab initio Impurity Scattering Monte Carlo Simulation Study

Results of statistical 3D Monte Carlo (MC) simulation of random dopant induced current variations are presented for a series of well-scaled nano-MOSFETs. Comparison is made with drift diffusion (DD) results showing an increase in the estimated current variation. This is associated with additional transport variation that has been included within the MC