A 1.7mm-Square 3.2kV Low Leakage Current Si MOSFET

We proposed a new termination structure to minimize the chip size of high breakdown voltage vertical DMOSFETs and to manufacture them using a MEMS process. As a result, we were able to realize a fully functional 1.7 mm square silicon DMOSFET with a breakdown voltage of 3200 V, a leakage current of 1.2 nA at 200 V and an on-state resistance of 165Omega