High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

Enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs) with integrated slant field-plates were developed for high breakdown voltage (V
_BD
) and low on-resistance (R
_ON
). Combination of the self-aligned slant field-plate technology for high VBD and self-aligned CF4 plasma treatment for E-mode operation yielded high-performance device with a V
_BD
of 1400V, which is one of the highest reported VBD value among GaN-based E-mode HEMTs. Using the active area of the device, the R
_ON
was calculated to be below 3mOmegamiddotcm
²