Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

We, for the first time, have successfully fabricated amorphous Ga
₂
O
₃
-In
₂
O
₃
-ZnO thin film transistor (TFT) with excellent electrical properties and good stability under constant current stress. This transistor shows a field effect mobility of 10 cm
²
/Vs, an off current below 2 pA and a drain current on-to-off ratio of above 10
⁸
. The threshold voltage shift was less than 0.2 V for 100 hours at 3 muA and 60 degC. Such stable oxide transistors can be utilized as driving transistor for large area OLED display