Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

We have investigated what effects randomly oriented and rotated poly-Si gate grains have on lateral carrier profiles in sub-50-nm MOSFETs by direct observations and electrical measurements. Since amorphous gates suppress random channeling penetration of pocket implants, we have increased effective mobility (40%), improved V
_th
roll-off characteristic (7 nm) and decreased V
_th
fluctuation (-26%)