Extraction of equivalent electrical models for damascene MIM capacitors in a standard 120 nm CMOS technology for ultra wide band applications

Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits. In this paper, several 0.12 mum-CMOS Cu-Si
₃
N
₄
-Cu capacitors realized with damascene architecture and whose process allows high-k dielectric compatibility have been designed and characterised from 45 MHz to 40 GHz. Large band equivalent electrical models have been carried out and commented