Characterization of the Ultrathin $\hbox{HfO}_{2}$ and Hf-Silicate Films Grown by Atomic Layer Deposition

The physical properties of $\hbox{HfO}_{2}$ and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 $\hbox{cm}^{-1}$ originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ interface after postdeposition annealing process at 600 $^{\circ}\hbox{C}$ for 1 min. Moreover, the intensity of the peak at 750 $\hbox{cm}^{-1}$ can indicate the degree of crystallization of $\hbox{HfO}_{2}$ . The formed Hf-silicate layer between $\hbox{HfO}_{2}$ and $ \hbox{SiO}_{2}$ is also confirmed by X-ray photoelectron spectroscopy.