A New Consistent RF-and Noise Model with Special Emphasis on Impact Ionisation for Dual-Gate HFET in Cascode Configuration

A consistent small-signal and RF-noise equivalent circuit for Dual-Gate Heterostructure Field Effect Transistors, including the influence of impact ionisation and gate-leakage current on the electronic properties, is presented. The capability of the new model is clearly demonstrated by bias-dependent investigations of the RF- and noise behaviour of InAlAs/InGaAs/InP-DGHFET.