A multi-stack quantum barrier varactor on InP for MM-wave frequency tripling

Conventional Multi-Stack Quantum Barrier Varactor (MS-OBV) diodes on GaAs suffer from leaky barriers and low breakdown voltages which limits their performance in high power applications. Using a lattice matched InGaAs/InAIAs/InGaAs barriers on InP we have grown a 10 stack device wih a very low leakage current and high breakdown voltage. Measurements show a very low series resistance of 1.2 Ω with breakdown voltage reaching up to 22 volts. The power capability of this new diode has been investigated by simulations and measurements. The obtained results indicate a good agreement with 22 dBm at 60 GHz and 19.6 dBm at 93 GHz with no saturation effect observed in leaky barrier devices.