Characterization of Microwave Power FETs Based on Physical Models

A physical model is used to accurately quantify the dependence of microwave performance and breakdown voltage of power FETs on device geometry and doping profile. The characterisation of double-recessed power FETs using physical models is presented for the first time in this paper. The influence of trapping phenomena in semi-insulating substrates and surface states is accounted for. Simulated results show very good correlation with measured data.