Recent Developments in Microwave Semiconductor Devices for Satellite Communications and Direct Broadcasting

Activities on microwave and millimeter-wave compound semiconductor devices in Japan are reported. Low noise performances for 2DEGFETs have been remarkably improved with sub-1/4μm gate and AlGaAs/InGaAs structures. Applications for millimeter-wave low noise and power amplifiers are described. Self-aligned GaAs MES FETs with sub-1/2μm gate, are well refined for Ka band MMICs. Recent activities on MMICs and GaAs power MESFETs are reviewed.