Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

The samples with layer of silicon nanocrystals ncSi embedded in SiO
₂
(the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO
₂
-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.