GaBi Liquid Metal Alloy Ion Source for the Production of Ions of Interest in Microelectronics Research

In this work a Ga₃₈Bi₆₂ alloy liquid metal ion source has been studied, which allows to implant in the case of a silicon substrate shallow donor ions (Bi) as well as acceptors (Ga) in the sub micron range without changing the source. A detailed analysis of the mass spectra as a function of emission current, obtained from this source, was used to investigate the mechanism for the production of single and double-charged ions. Moreover, the intensity of cluster ions extracted by the source, as a function of emission current is represented. Theoretical modeling supports the experimental results