Nickel ohmic contact on silicon carbide

We obtained ohmic contact structure with the best contact resistivity of 4.06times10
^-4
Omega cm
²
and with excellent thermal stability - the metallization was stable after being tested for 10 hours at 900 degC. The as deposited structure contains oxygen and carbon. Make allowance for the composition of the species in the structure after annealing Ni and Si create Ni
₂
Si silicides. The reaction release carbon so the structure contains large quantity of vacant carbon