Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack

The authors have studied advanced MOS structure containing Ru gate electrode, Hf
_0.75
Si
_0.25
O
_y
dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf
_0.75
Si
_0.25
/Si gate stack