Accurate Experimental Noise Characterization of GaAs FET's at 18 and 20 GHz through the use of the Noise Waves Model.

The noise temperature of FET's at 18 and 20 GHz is experimentally determined as a function of the source reflection factor through the use of the recently developed noise waves model. The method appears to be able to provide unbiased results for FET'-chips without any input tuning. Removing the second stage contribution is possible under arbitrary load conditions (with or without output matching). It is based on accurate S parameters measurements that now can be achieved by means of computerized vector error correction. Computer implementation is readily achieved on advanced personal or desktop calculators.