X-Band GaAs Mesfet Oscillators for MIC Purposes

GaAs MESFETs with 200 μm gate width were examined for MIC oscillator purposes without using external high Q-resonators. Using the small signal equivalent circuit with 15 elements valid up to the x-band the small signal parameters were derived for different oscillator circuits. The field effect transistor was tested in common source, common gate and common drain operation.