An Easy to Use PSPICE Model for Power Transistors in RF Switching Operation and Including Voltage Dependent Output Capacitance

An easy to build and use power transistor model for high efficiency switching RF power amplifiers has been built and used. Advantages of the model are inclusion of a voltage variable capacitance (Cout) and time saved in its construction compared with classical methods. The model is useful to study the influence of Cout in the behaviour of the amplifier and has been yet used in that way with successful results for class E topology including experimental verification [1]. In this paper the structure of the model, the way to build it and some examples of its use are described. More details and results will be published in an extended version of this work.