Improved Measurement Procedure for Extremely Low Noise Figures of FETs in the Frequency Range below 3 GHz

Full noise characterization of transistors comprises the experimental determination of minimum noise figure NF,;,, noise resistance R,, and optimum source reflection coefficient magnitude irupaJnd angle L.. The usual commercial and laboratory equipment is mainly designed for the microwave and millimeter-wave frequency range and the performance in the RF and lower GHz range (f < 3 GHz) deteriorates. This range, however, is of special interest for wireless applications.