Accurate I-V Characterization of GaAs Heterojunction Bipolar Transistors Using A Precision Pulsed I-V System

Accurate HBT I-V characterization using a precision VXI-based pulsed I-V system is presented. Narrow pulse (sub microsecond) characterization of HBTs minimizes the self-heating (thermal) effects, and trapping effects associated with I-V characterization. Long and short pulse width I-V measurements are compared, and observed thermal (conduction band and substrate) effects are discussed. This is the first accurate HBT pulsed (<1 microsecond) I-V characterization capability reported in the open literature.