A Non-Linear High-Power MESFET Amplifier Model Verified by Waveform and Load-Pull Measurements

A high-power metal-semiconductor field-effect transistor amplifier model was developed based on novel theoretical features and experimental verification techniques. The model accurately predicts the amplifier output characteristics, including power, efficiency and linearity, as functions of bias, input and load conditions. Detailed variation of intermodulation distortion with input power was explained. Self-biasing and tuning schemes to improve amplifier linearity were predicted and verified experimentally.