Full-Circuit Design Optimization of a RF Silicon Integrated Passive Device

A schematic-electromagnetic (EM) hybrid optimization scheme was used to design an integrated passive device (IPD)-diplexer. The method uses component values derived from circuit simulation and optimization to determine physical design changes. The diplexer was fabricated in a silicon wafer process. The small form-factor (2.6 times 1.3 times 0.25 mm
³
) of this device makes it very attractive for system in package (SiP) applications. Simulated and measured results show good agreement