Optimization of Surface Orientation for High-Performance, Low-Power and Robust FinFET SRAM

We analyze the impact of surface orientation on stability, performance and power of 6-T and 8-T FinFET SRAMs. We show that, in comparison to 32nm 6-T FinFET SRAM cell with devices of (110) orientation, multi-oriented devices with optimized orientation can improve the static noise margin (SNM) by 23-35% and access time (~22-33%), while consuming the same leakage power. For 8-T FinFET SRAM, multi-oriented devices can improve write stability substantially (~17%) with negligible area overhead