On-wafer verification of a large-signal MESFET model

A relatively simple and new RF measurement procedure that can be made on wafers is used to verify a foundry model for test FETs. The nonlinear FET model agrees well with the measured devices with respect to the gain, gain compression at fundamental frequency, and power output at second and third harmonics. It is particularly significant that these test chips were not used in earlier measurements made to develop the mode.<
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