Local oxidation process simulation in nanoscale MOS/CMOS structures

Problems of local oxidation, related with oxidation time, temperature, silicon oxide layer, patterned silicon nitride in MOS/CMOS structure was researched. During local oxidation of silicon most CMOS quality depends on gate channel shortening, diffusion region separation. Oxidation mathematical models are created using program SUPREM. It is determined, that most acceptable results are received when time t=12 min., temperature T=1000degC, SiO
₂
thickness = 4 nm., Si
₃
N
₄
thickness = 100 nm