The Impact of Device Structure and Quantum Mechanics on Effective E-Field in Ultra-thin Body and Double-gate SOI MOSFETs

Mobility bias-dependence is usually modeled by the effective electric field (E
_eff
). However, the influence of different device structures and quantum effect on the E
_eff
has not been thoroughly studied. In this paper, the E
_eff
in ultra-thin body (UTB) and double-gate (DG) MOSFETs is derived from the Poisson equation. Based on the E
_eff
, symmetric DG devices show higher mobility than asymmetric DG and UTB devices. Extensive simulations also show the quantum effect has no influence on the E
_eff
, from which the effective mobility (mu
_eff
) modeling with quantum consideration can be greatly simplified