Noise Modeling Based on Self-Consistent Surface-Potential Description for Advanced MOSFETs aiming at RF Applications

We have developed MOSFETs noise models for the 1/f, thermal and induced-gate noise based on self-consistent surface-potential description. Consideration of non-uniform mobility and carrier distributions arising from the surface potential distribution along the channel is indispensable for accurate noise modeling for RF applications. The developed noise models are implemented in the complete surface-potential based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model) for circuit simulations