Dual-work-function modulation for Ni-FUSI metal gate CMOS technology

This paper investigates the work function adjustment of Ni-FUSI metal gate. It is obvious that implanting dopant into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently. With the implantation of P-type or N-type dopants, such as BF
₂
and As or P, the work function of Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of PMOS or NMOS