An investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

This paper is submitted with an investigation concerning the effects of the Si thickness-induced variation of the electrical characteristics in the FDSOI with block oxide. We noticed that the traditional sidewall spacer process is used and processed to produce the block oxide enclosing the Si-body in our proposed structure, the undesirable ultra-short-channel effects can be significantly diminished via the suppressed charge sharing out of the source/drain to the body, as compared to the conventional UTBSOI MOSFET. Also, owing to the required thickness of the Si-body, the self-heating problem gets improved, so the reliability of these structures be upgraded and benefit a renewed interest in the single-gate FDSOI MOSFET for the future ULSI applications.